Using LDMOS Transistor in Class-F Power Amplifier For WCDMA Applications
نویسندگان
چکیده
منابع مشابه
Using LDMOS Transistor in Class-F Power Amplifier For WCDMA Applications
The fundamental operating principle of a Class F power amplifier and the factors aiding or affecting Class F performance were explicated previously. A Class F power amplifier design which satisfies WCDMA specifications is explained in this paper. The Class F amplifier was designed by employing Motorola’s LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor models and we simulated its...
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Short Abstract—A simplified inverse class F power amplifier (PA) with a voltage second harmonic peaking and third harmonic short operating at 2.14GHz for WCDMA base station applications has been developed. The load network is based on transmission line harmonic traps and provides high impedance at the second and low impedance at the third harmonic to the PA. The PA uses a packaged Silicon LDMOS...
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ژورنال
عنوان ژورنال: International Journal of Communications, Network and System Sciences
سال: 2011
ISSN: 1913-3715,1913-3723
DOI: 10.4236/ijcns.2011.410081